Mitsubishi power device Power Device > SiC Power Device > FMF400BX-24B. B Public Relations Division Mitsubishi Electric Corporation Mitsubishi Electric Corporation Power Device > IGBT-MODULE-LV100 > CM1200DW-34T. * According to Mitsubishi Electric research, at the time of this announcement the new SiC device had the world’s highest power efficiency rating of any 1200V-class power device with a short-circuit time exceeding 8 μs. *1：Side P-Well in Trench Devices Power Device Works (Fukuoka) is here. SiC Power Modules This page presents information about Mitsubishi Electric's power devices for Applications. 1) Flying cars, 2) Electric airplanes, 3) Wireless power supply, 4) Ultra-high-power density power supply systems, 5) Advances to medium and high voltages, 6) Ultra-high-power density actuators, and 7) Space applications. 3749 Power Device > IGBT-MODULE-LV100 > CM1200DW-24T. This is a simulation software designed for the power loss calculation with Mitsubishi Electric power modules under customers specific application conditions (2-level *1 and 3-level *2 inverter circuit) and for junction temperature rises as a consequence of power loss. Proven High-Quality track-record with more than 22 Million xEVs on the road. Rectifier The Power-I ® platform is completely configurable and leverages a host of sensor devices to collect and analyze key data points in the substation. Power Device > IGBT-MODULE-STD > CM150DY-13T. Parameter Level Value Unit Power Device > Product Information > Power modules > MOSFET-MODULE Power MOSFET Modules In the power device market, which demands high-speed switching voltage drive and low loss, MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has proven performance in low current, low withstand voltage fields. Bare Die Introducing base information for Mitsubishi Electric's power device products. Parameter Level Value Unit Supply situation High Power Devices Supports operating environments with high withstand voltage and high current (e. subways), in addition to steel rolling mills and power grids. within January 2018. Mitsubishi Electric began developing SiC as a new material in the early 1990s. Nov 20, 2024 · TOKYO, November 20, 2024 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of power semiconductor modules at its Power Device Works in Fukuoka Prefecture, Japan. SiC Power Modules FMF375DC-66A. Refrigerator. IGBT Modules T series CM1200DW-24T. (Related standard: International Electrotechnical Commission Standard( IEC standard)). Mitsubishi Electric is contributing to the realization of carbon neutrality and a safe, secure, and comfortable society by providing innovative and ever-evolving semiconductors and devices. IGBT Modules TH series CM400DU-24TH. Power Device > SiC Power Device > FMF800DC-66BEW. Bare Die *Senior General Manager, Power Device Works Mitsubishi Electric ADVANCE December 2020 1 TECHNICAL REPORTS Overview Author: Yukio Yasuda* Latest Technology Trends and Prospects for Power Modules The increasing consumption of energy and the emission of massive quantities of CO2 are global issues that must be urgently addressed. Parameter Level Value Unit High Power Devices Supports operating environments with high withstand voltage and high current (e. Air Conditioner. SMD(Surface-mount Device) type IPM. High-Frequency and Optical Device：Expand GaN device sales for base station applications, where demand is expected to grow, while maintaining solid optical device business . Parameter Level Value Power Device > IGBT-MODULE-STD > CM400DU-24TH. 。 Mitsubishi Electric does not collect any information such as evaluation Oct 2, 2023 · Dec 13, 2023 "Full/Hybrid SiC power module Full SiC IPM page" updated Nov 01, 2023 "Power Devices Catalog" updated Oct 02, 2023 Power Devices Website site has been completely renewed. Mitsubishi Electric GEM Power Device (Hefei) Co. Mitsubishi Electric provides highly efficient power modules for traditional and renewable energy sources that distribute power effectively and reliably, industrial and automation applications, hybrid and electric vehicles, and home appliances. Rated voltage=1200V～1700V HV-SiC power modules. on November 3 to acquire the Mitsubishi Electric power device sales business currently handled by Powerex, which will be taken over by Mitsubishi Electric US, Inc. Power Device > SiC Power Device > FMF375DC-66A. Pioneered mass production of xEV power modules Since 1997. Small-capacity de facto standard package V CES =600V, I C =5A～40A This page introduces the further information in each type number of power devices. Hybrid SiC power modules. In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device. Power Modules. After baseline conditions are set, the intelligent platform monitors the key assets to identify trends and any data points that vary from the baseline (normal) conditions. Mar 14, 2023 · TOKYO, November 20, 2024 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of power semiconductor modules at its Power Device Works in Fukuoka Prefecture, Japan. IGBT Modules T series Mitsubishi Electric is contributing to the realization of carbon neutrality and a safe, secure, and comfortable society by providing innovative and ever-evolving semiconductors and devices. Japan detail page(Mitsubishi Electric). packaging technologies. Parameter Level Value Unit February 15, 2022 Mitsubishi Electric to Launch "SLIMDIP-X" Power semiconductor moduleOpens in new window Bodo’s Power: April 2021 Small Power IPM for High Integration Demand Reliability of Power Modules This page presents application notes about Mitsubishi Electric's power devices. Parameter Level Value Unit Power Device > SiC Power Device > FMF600DXE-24BN. SiC Power Modules FMF600DXZA-24B. So, what needs to be accomplished to get to these goals sooner, instead of in 100 years? Production item: Power device assembly process. SiC Power Modules High-power devices contribute to increased efficiency and energy savings by supporting the high-voltage, high-current and usage environment of rollers in steel works, electric power systems and the subway. Diode Modules High-voltage Diodes RM1800HE-34X. SiC Power Modules CMH600DU-24NFH. Power Device > IGBT-MODULE-NX > CM100TXP-24T. Rectifier Diodes. Power Devices. For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection; For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC) Power Device > Product Information > Power Modules. g. These include power devices that achieve energy-saving, miniaturization, and high-reliability for power electronic equipment, optical devices and high-frequency devices realizing seamless HV SiCモジュールの紹介. Power Devices > Applications. The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Parameter Level Value Unit Contributing to the realization of "Green Transformation" (GX) and "Digital Transformation" (DX) with innovative and ever-evolving semiconductors & devices. In order to contribute to even higher efficiency, downsizing, and weight reduction of industrial equipment, we have enhanced our lineup with the SiC power module as the 2nd generation SiC module, the hybrid SiC power module. IGBT Modules T series CM1200DW-40T. HVIGBT Modules / HVIPM X series CM900HG-130X. High Power Devices Supports operating environments with high withstand voltage and high current (e. 59, 2060 Bicske, Hungary High Power Devices Supports operating environments with high withstand voltage and high current (e. Super Mini DIPIPM. The example of the test item and test conditions for the representative type of power modules are shown below. Melco Power Semiconductor Chip Corporation Japan 810-1 Kitahara, Miyoshi, Koshi-shi, Kumamoto Prefecture, Japan Production item: Power device wafer process. Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). Power Device > Product Information > Power Modules. This lineup features SiC power semiconductors contributing to further energy-saving, downsizing and high efficiency of railway carriage traction systems, power-related systems such as direct-current transmission and power conversion equipment such as inverters. Rated voltage=1200V～1700V Rated current=75A～1200A. SiC Power Modules Automotive power devices are applied in various components, such as traction inverters, boost converters, air conditioners, on-board chargers, converters, and AC inverters, in electric vehicles. IPMs G1 series PM75CG1B120. With its distinctive products features, Mitsubishi Electric is a solid partner for worldwide xEV customers. IGBT Modules T series Nov 8, 2017 · TOKYO, November 8, 2017 -Mitsubishi Electric Corporation (TOKYO: 6503) today announced that it reached an agreement with Powerex Inc. Power Device > SiC Power Device > CMH1200DC-34S. No. Parameter Level Value society. Mitsubishi semiconductor devices are tested for reliability refer to Japan Electronics and Information Technology Industries Association (JEITA). FOR IMMEDIATE RELEASE No. IGBT Modules T series CM1200DW-34T. Pursuing special characteristics, we succeeded in developing various elemental technologies. This page introduces the further information in each type number of power devices. SOPIPM™ is an IPM (intelligent power module) adopting a surface-mount package with easy PCB mounting. An HVIC is a high-voltage IC with various built-in protection functions; it uses input signals from a microcomputer or other device to directly drive gates in power MOSFETs or IGBTs. Parameter Level Value Unit Supply situation Power Device ：Strong momentum for decarbonization initiates mid-term market expansion and high growth will be achieved mainly in the automotive and consumer fields. 3580 Customer Inquiries Media Inquiries Power Device Overseas Marketing Dept. This site showcases our latest power device offerings. Power Device > SiC Power Device > FMF300BXZ-24B. Mitsubishi Electric began mass production of SiC modules as the 1st generation in 2013. Mitsubishi Electric‘s lineup of power semiconductors include HVICs (High Voltage IC). To satisfy the diversifying requirements for power modules of PE devices, Mitsubishi Electric has released the latest 7th Generation silicon (Si) and silicon carbide Higher power-added efficiency of more than 43% in the 400MHz band reduces power consumption of 5G massive MIMO * base stations Modularization of power amplifiers reduces the circuit design burden and manufacturing cost of 5G massive MIMO base stations * MIMO：Multiple Input Multiple Output This page introduces the further information in each type number of power devices. It is ideal for small-capacity motor drive applications with limited mounting space, such as air conditioners and fan motors. These include power devices that achieve energy-saving, miniaturization, and high-reliability for power electronic equipment, optical devices and high-frequency devices realizing seamless Mitsubishi Electric GEM Power Device (Hefei) Co. , Ltd. 3749 TOKYO, November 8, 2017 - Mitsubishi Electric Corporation (TOKYO: 6503) today announced that it reached an agreement with Powerex Inc. For a complete listing of all our power device products, please visit our global site. High Power Devices. Applications. In addition to the Bottom P-Well structure that protects the gate oxide film, Mitsubishi original structure (SPW *1, J-FET doping *2) realizes high gate reliability, low Ron, and low switching loss. Sales. China Mar 14, 2023 · TOKYO, November 20, 2024 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of power semiconductor modules at its Power Device Works in Fukuoka Prefecture, Japan. Cooling methods for power semiconductor device mounting between cooling fins. Mitsubishi Electric began the development of elemental SiC technologies in Power Device > SiC Power Device > FMF600DXZA-24B. Thyristors MITSUBISHI ELECTRIC CORPORATION PUBLIC RELATIONS DIVISION 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 100-8310 Japan 1/2 . Contributing to the realization of "Green Transformation" (GX) and "Digital Transformation" (DX) with innovative and ever-evolving semiconductors & devices. From rectifier diodes to a variety of Thyristors and stacks, Mitsubishi Electric offers a broad range of new high power devices. Mitsubishi Electric Begins Supplying Power Semiconductor Chips Made from 12-inch Wafers for Semiconductor Module Assembly Power Device > Product Information > Power Modules. A and Dept. Power Device > IPM-G1 > PM75CG1B120. Bare Die Power Device > Diode Modules > RM1800HE-34X. Power Devices > Sales. These power modules are supplied to applications including agricultural, household, industrial, automotive, electric railway, and electric power sectors. Features of Mitsubishi Electric automotive power devices MITSUBISHI ELECTRIC CORPORATION PUBLIC RELATIONS DIVISION 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 100-8310 Japan 1/2 . Rated voltage=1700V～3300V Whether in appliances, railcars, EVs, or industrial systems, our power modules are key elements in changing the way energy is used. Parameter Level Value Unit Supply situation Power Device > HVIGBT X-series std type > CM900HG-130X. Power Device > SiC Power Device > CMH600DU-24NFH. MITSUBISHI ELECTRIC CORPORATION PUBLIC RELATIONS DIVISION 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 100-8310 Japan 1/2 . Bare Die Nov 20, 2024 · TOKYO, November 20, 2024--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection most likely be possible in 100 years. . SiC Power Modules FMF600DXE-24BN. Power Device > IGBT-MODULE-LV100 > CM1200DW-40T. SiC Power Modules FMF800DC-66BEW. Parameter Level Value Unit Supply situation Features. 928, QingTan Road, Hefei Economic & Technological Development Area, Hefei, Anhui Province, Peoples Republic of China: Vincotech Hungary Electronic Production Limited Liability Company: Kossuth Lajos u. Full SiC modules. ipflw soh ahmguz zgzvz yfdh zhppdiz wwzevdo mexu jgynyo rhhr